ASVAB Electronics Information (EI) Practice Test (2026) covers ASVAB Electronics Information (EI) practice test in a four-choice format with a “Show Answer” toggle for review. Each item includes the correct answer, a concise explanation, and official citations where applicable so you can verify what the test is targeting. Use it to practice circuits, symbols, tools, basic components, and practical electronics terms.
FAQ
What should I know for ASVAB Electronics Information (EI) on the ASVAB?
Focus on the recurring concepts that appear in many forms, not one-off trivia. Learn the key terms, practice mixed sets, and use explanations to build a quick recognition habit so you don’t overthink simple items.
What is Electronics Information (EI) on the ASVAB?
It measures practical knowledge in context—recognizing terms, concepts, and correct applications the way they appear in short, real-world questions. The key is understanding the underlying idea well enough to eliminate close distractors.
What is Electronics Information (EI) on the ASVAB (part 2)?
It measures practical knowledge in context—recognizing terms, concepts, and correct applications the way they appear in short, real-world questions. The key is understanding the underlying idea well enough to eliminate close distractors.
What should I know for ASVAB Electronics Information (EI) on the ASVAB (part 2)?
Focus on the recurring concepts that appear in many forms, not one-off trivia. Learn the key terms, practice mixed sets, and use explanations to build a quick recognition habit so you don’t overthink simple items.
How many ASVAB Electronics Information questions are on the ASVAB?
It varies by test format and form, but this subtest is timed and rewards pacing. Plan for a few dozen questions and practice moving on when one is taking too long, then return if time remains.
ASVAB Auto Shop Practice Test (AS) — Practice Questions and Answers
Explanation: Ohm’s law: I = V/R = 12/6 = 2 A.
Citation: ASVAB content domain — Electronics Information; underlying principle: Ohm’s law (I = V/R).
Explanation: Series resistances add: 4 + 8 = 12 Ω.
Citation: ASVAB content domain — Electronics Information; underlying principle: series resistance addition.
Explanation: Parallel: 1/R = 1/6 + 1/3 = 1/2, so R = 2 Ω.
Citation: ASVAB content domain — Electronics Information; underlying principle: parallel resistance (reciprocal sum).
Explanation: Power P = VI = 9 × 0.5 = 4.5 W.
Citation: ASVAB content domain — Electronics Information; underlying principle: electrical power (P = VI).
Explanation: With constant resistance, I = V/R, so doubling V doubles I.
Citation: ASVAB content domain — Electronics Information; underlying principle: linear V–I relationship for resistors.
Explanation: A diode conducts forward and blocks reverse (ideally).
Citation: ASVAB content domain — Electronics Information; underlying principle: diode rectification.
Explanation: A series resistor drops voltage and limits LED current.
Citation: ASVAB content domain — Electronics Information; underlying principle: current limiting with resistors.
Explanation: Energy stored is U = ½CV², so increasing V raises energy strongly.
Citation: ASVAB content domain — Electronics Information; underlying principle: capacitor energy (½CV²).
Explanation: The coulomb is the SI unit of electric charge.
Citation: ASVAB content domain — Electronics Information; underlying principle: electric charge units.
Explanation: Q = CV = 10 µF × 5 V = 50 µC.
Citation: ASVAB content domain — Electronics Information; underlying principle: capacitor charge (Q = CV).
Explanation: Inductors resist current change and store energy magnetically.
Citation: ASVAB content domain — Electronics Information; underlying principle: inductance and magnetic energy storage.
Explanation: Transformers use mutual induction to change AC voltage levels.
Citation: ASVAB content domain — Electronics Information; underlying principle: transformer action (mutual induction).
Explanation: V_s/V_p = N_s/N_p = 50/200 = 1/4, so V_s = 30 V.
Citation: ASVAB content domain — Electronics Information; underlying principle: transformer turns ratio.
Explanation: An ohmmeter measures resistance (often within a multimeter).
Citation: ASVAB content domain — Electronics Information; underlying principle: basic electrical measurement instruments.
Explanation: A series circuit needs a complete path; an open makes current zero.
Citation: ASVAB content domain — Electronics Information; underlying principle: series circuit continuity.
Explanation: A sine wave is the fundamental smooth periodic waveform.
Citation: ASVAB content domain — Electronics Information; underlying principle: AC waveform basics.
Explanation: Hertz (Hz) is cycles per second.
Citation: ASVAB content domain — Electronics Information; underlying principle: frequency units.
Explanation: Cycles = frequency × time = 60 × 2 = 120 cycles.
Citation: ASVAB content domain — Electronics Information; underlying principle: frequency-time relationship.
Explanation: Metals like copper conduct well due to free electrons.
Citation: ASVAB content domain — Electronics Information; underlying principle: conductors vs insulators.
Explanation: A fuse opens the circuit when current exceeds its rating.
Citation: ASVAB content domain — Electronics Information; underlying principle: overcurrent protection.
Explanation: P = VI = 120 × 3 = 360 W.
Citation: ASVAB content domain — Electronics Information; underlying principle: power calculation (P = VI).
Explanation: Reactance is the frequency-dependent opposition from capacitors/inductors.
Citation: ASVAB content domain — Electronics Information; underlying principle: AC reactance concept.
Explanation: Time constant τ = RC; increasing C increases τ.
Citation: ASVAB content domain — Electronics Information; underlying principle: RC time constant.
Explanation: A common approximation for silicon diode forward drop is about 0.7 V.
Citation: ASVAB content domain — Electronics Information; underlying principle: diode forward voltage (silicon).
Explanation: In an NPN transistor, base drive controls a much larger collector-to-emitter current.
Citation: ASVAB content domain — Electronics Information; underlying principle: transistor current control (switching/amplification).
Explanation: First find current: I = V/R = 24/8 = 3.0 A. Then power: P = VI = 24×3.0 = 72 W (equivalently V²/R).
Citation: ASVAB content domain — Electronics Information; underlying principle: Ohm’s law and power (I = V/R, P = VI).
Explanation: Series resistance adds: R_total = 5+7+8 = 20 Ω. Current I = V/R_total = 20/20 ≈ 1.00 A.
Citation: ASVAB content domain — Electronics Information; underlying principle: series resistance and Ohm’s law.
Explanation: For parallel resistors, 1/R_eq = 1/6 + 1/12 + 1/24 = 4/24 + 2/24 + 1/24 = 7/24, so R_eq = 24/7 ≈ 3.43 Ω.
Citation: ASVAB content domain — Electronics Information; underlying principle: parallel resistance (reciprocal sum).
Explanation: V_out = V_in × R_bottom/(R_top+R_bottom) = 18×6000/(3000+6000) = 18×(2/3) = 12.0 V.
Citation: ASVAB content domain — Electronics Information; underlying principle: voltage divider (series resistors).
Explanation: The tolerance band specifies how far the actual resistance may vary from the stated nominal value (e.g., ±5%).
Citation: ASVAB content domain — Electronics Information; underlying principle: resistor tolerance concept.
Explanation: Q = CV. Using µF×V gives µC: Q ≈ 22×9 = 198 µC.
Citation: ASVAB content domain — Electronics Information; underlying principle: capacitor charge (Q = CV).
Explanation: Energy in a capacitor is U = ½CV² = 0.5×47×10⁻⁶×12² ≈ 0.003384 J = 3.38 mJ.
Citation: ASVAB content domain — Electronics Information; underlying principle: capacitor energy (½CV²).
Explanation: Inductor energy is U = ½LI² = 0.5×0.020×3² = 0.5×0.020×9 = 0.09 J.
Citation: ASVAB content domain — Electronics Information; underlying principle: inductor energy (½LI²).
Explanation: X_L = 2πfL = 2π×400×0.015 ≈ 37.7 Ω.
Citation: ASVAB content domain — Electronics Information; underlying principle: inductive reactance (X_L = 2πfL).
Explanation: X_C = 1/(2πfC) = 1/(2π×1000×0.10×10⁻⁶) ≈ 1592 Ω.
Citation: ASVAB content domain — Electronics Information; underlying principle: capacitive reactance (X_C = 1/(2πfC)).
Explanation: X_C = 1/(2πfC). As frequency f increases, the denominator increases, so X_C decreases.
Citation: ASVAB content domain — Electronics Information; underlying principle: frequency dependence of capacitive reactance.
Explanation: X_L = 2πfL, so it increases directly with frequency.
Citation: ASVAB content domain — Electronics Information; underlying principle: frequency dependence of inductive reactance.
Explanation: RMS is defined so that P = V_rms²/R matches the heating effect of an equivalent DC voltage on a resistor.
Citation: ASVAB content domain — Electronics Information; underlying principle: RMS equivalence for resistive power.
Explanation: A forward-biased silicon diode typically drops about 0.7 V, reducing the voltage available to the resistor by that amount.
Citation: ASVAB content domain — Electronics Information; underlying principle: diode forward drop (silicon approximation).
Explanation: An LED is a diode; reverse bias blocks current (until breakdown), so the LED will not conduct normally.
Citation: ASVAB content domain — Electronics Information; underlying principle: diode polarity (forward vs reverse bias).
Explanation: Series LEDs drop more total voltage, so the resistor must drop less voltage for the same current, meaning a smaller resistance is needed (within safe design limits).
Citation: ASVAB content domain — Electronics Information; underlying principle: series voltage drops and current limiting.
Explanation: Parallel halves the equivalent resistance, so I = V/R increases to about twice for identical resistors.
Citation: ASVAB content domain — Electronics Information; underlying principle: parallel circuits and equivalent resistance.
Explanation: The wattage rating indicates how much heat (power) the resistor can handle without overheating or failing.
Citation: ASVAB content domain — Electronics Information; underlying principle: resistor power dissipation limits.
Explanation: Transformer action depends on changing flux (AC or switching). Steady DC creates no changing magnetic field after transients.
Citation: ASVAB content domain — Electronics Information; underlying principle: transformer requires changing flux (Faraday’s law).
Explanation: Voltage ratio follows turns ratio: V_s/V_p = N_s/N_p = 75/300 = 0.25, so V_s ≈ 240×0.25 = 60 V.
Citation: ASVAB content domain — Electronics Information; underlying principle: transformer turns ratio (V proportional to turns).
Explanation: A properly sized fuse adds minimal resistance; it opens only when current exceeds its rating.
Citation: ASVAB content domain — Electronics Information; underlying principle: overcurrent protection (fuse operation).
Explanation: Ground is often a reference point (0 V) for measuring other node voltages; it may or may not be tied to earth ground.
Citation: ASVAB content domain — Electronics Information; underlying principle: voltage reference (ground) concept.
Explanation: AC varies and alternates over time (nonzero frequency). Ideal DC is constant, equivalent to 0 Hz.
Citation: ASVAB content domain — Electronics Information; underlying principle: time-varying signals and frequency.
Explanation: A capacitor’s reactance is very high at DC (f=0), so it blocks DC but can pass changing (AC) signals depending on frequency.
Citation: ASVAB content domain — Electronics Information; underlying principle: capacitive coupling (blocking DC).
Explanation: Inductive reactance X_L = 2πfL rises with frequency, so it impedes high-frequency noise more than low-frequency current.
Citation: ASVAB content domain — Electronics Information; underlying principle: inductive reactance increases with frequency.
Explanation: Power is P = I²R = (1.10)²×5 ≈ 6.05 W.
Citation: ASVAB content domain — Electronics Information; underlying principle: power in resistors (P = I²R).
Explanation: Series current I = V/(R1+R2) = 24/(3+12) ≈ 1.60 A. Then V_R1 = IR1 ≈ 4.80 V.
Citation: ASVAB content domain — Electronics Information; underlying principle: series circuits (voltage division via IR drops).
Explanation: Each branch has 15 V. I1 = 15/5 ≈ 3.00 A and I2 = 15/7 ≈ 2.14 A. Total is 5.14 A.
Citation: ASVAB content domain — Electronics Information; underlying principle: parallel circuits (branch currents add).
Explanation: C_eq = (C1·C2)/(C1+C2) = (12·18)/(30) ≈ 7.20 µF.
Citation: ASVAB content domain — Electronics Information; underlying principle: series capacitance (reciprocal sum).
Explanation: X_L = 2πfL. L = 14 mH = 0.014 H, so X_L ≈ 33.43 Ω.
Citation: ASVAB content domain — Electronics Information; underlying principle: inductive reactance (X_L = 2πfL).
Explanation: X_C = 1/(2πfC). With C = 0.52 µF, X_C ≈ 862 Ω.
Citation: ASVAB content domain — Electronics Information; underlying principle: capacitive reactance (X_C = 1/(2πfC)).
Explanation: I_s/I_p = N_p/N_s, so I_s = 0.98×(400/50) ≈ 7.84 A.
Citation: ASVAB content domain — Electronics Information; underlying principle: ideal transformer current ratio (inverse turns).
Explanation: The capacitor charges near waveform peaks and then supplies current between peaks, reducing ripple.
Citation: ASVAB content domain — Electronics Information; underlying principle: filter capacitor smoothing (reducing ripple).
Explanation: A Zener holds near-constant voltage in reverse breakdown, making it useful as a reference/regulator.
Citation: ASVAB content domain — Electronics Information; underlying principle: Zener breakdown for voltage reference.
Explanation: In a low-side NPN switch, the collector connects to the load and the emitter connects to ground.
Citation: ASVAB content domain — Electronics Information; underlying principle: BJT switch wiring (load at collector).
Explanation: MOSFETs are voltage-controlled; gate-to-source voltage sets conduction with minimal steady gate current.
Citation: ASVAB content domain — Electronics Information; underlying principle: MOSFET gate-to-source voltage control.
Explanation: Period T = 1/f. For f = 3053 Hz, T = 1/3053 s = 0.0003 s = 0.33 ms.
Citation: ASVAB content domain — Electronics Information; underlying principle: frequency–period relationship (T = 1/f).
Explanation: Power is P = I²R = (1.70)²×6 ≈ 17.34 W.
Citation: ASVAB content domain — Electronics Information; underlying principle: power in resistors (P = I²R).
Explanation: Series current I = V/(R1+R2) = 24/(8+15) ≈ 1.04 A. Then V_R1 = IR1 ≈ 8.35 V.
Citation: ASVAB content domain — Electronics Information; underlying principle: series circuits (voltage division via IR drops).
Explanation: Each branch has 15 V. I1 = 15/9 ≈ 1.67 A and I2 = 15/9 ≈ 1.67 A. Total is 3.33 A.
Citation: ASVAB content domain — Electronics Information; underlying principle: parallel circuits (branch currents add).
Explanation: C_eq = (C1·C2)/(C1+C2) = (16·30)/(46) ≈ 10.43 µF.
Citation: ASVAB content domain — Electronics Information; underlying principle: series capacitance (reciprocal sum).
Explanation: X_L = 2πfL. L = 38 mH = 0.038 H, so X_L ≈ 205.33 Ω.
Citation: ASVAB content domain — Electronics Information; underlying principle: inductive reactance (X_L = 2πfL).
Explanation: X_C = 1/(2πfC). With C = 1.24 µF, X_C ≈ 166 Ω.
Citation: ASVAB content domain — Electronics Information; underlying principle: capacitive reactance (X_C = 1/(2πfC)).
Explanation: I_s/I_p = N_p/N_s, so I_s = 1.34×(700/50) ≈ 18.76 A.
Citation: ASVAB content domain — Electronics Information; underlying principle: ideal transformer current ratio (inverse turns).
Explanation: The capacitor charges near waveform peaks and then supplies current between peaks, reducing ripple.
Citation: ASVAB content domain — Electronics Information; underlying principle: filter capacitor smoothing (reducing ripple).
Explanation: A Zener holds near-constant voltage in reverse breakdown, making it useful as a reference/regulator.
Citation: ASVAB content domain — Electronics Information; underlying principle: Zener breakdown for voltage reference.
Explanation: In a low-side NPN switch, the collector connects to the load and the emitter connects to ground.
Citation: ASVAB content domain — Electronics Information; underlying principle: BJT switch wiring (load at collector).
Explanation: MOSFETs are voltage-controlled; gate-to-source voltage sets conduction with minimal steady gate current.
Citation: ASVAB content domain — Electronics Information; underlying principle: MOSFET gate-to-source voltage control.
Explanation: Period T = 1/f. For f = 4529 Hz, T = 1/4529 s = 0.0002 s = 0.22 ms.
Citation: ASVAB content domain — Electronics Information; underlying principle: frequency–period relationship (T = 1/f).
Explanation: Power is P = I²R = (2.30)²×7 ≈ 37.03 W.
Citation: ASVAB content domain — Electronics Information; underlying principle: power in resistors (P = I²R).
Explanation: Series current I = V/(R1+R2) = 24/(6+18) ≈ 1.00 A. Then V_R1 = IR1 ≈ 6.00 V.
Citation: ASVAB content domain — Electronics Information; underlying principle: series circuits (voltage division via IR drops).
Explanation: Each branch has 15 V. I1 = 15/5 ≈ 3.00 A and I2 = 15/11 ≈ 1.36 A. Total is 4.36 A.
Citation: ASVAB content domain — Electronics Information; underlying principle: parallel circuits (branch currents add).
Explanation: C_eq = (C1·C2)/(C1+C2) = (20·18)/(38) ≈ 9.47 µF.
Citation: ASVAB content domain — Electronics Information; underlying principle: series capacitance (reciprocal sum).
Explanation: X_L = 2πfL. L = 62 mH = 0.062 H, so X_L ≈ 522.01 Ω.
Citation: ASVAB content domain — Electronics Information; underlying principle: inductive reactance (X_L = 2πfL).
Explanation: X_C = 1/(2πfC). With C = 1.96 µF, X_C ≈ 68 Ω.
Citation: ASVAB content domain — Electronics Information; underlying principle: capacitive reactance (X_C = 1/(2πfC)).
Explanation: I_s/I_p = N_p/N_s, so I_s = 1.70×(1000/50) ≈ 34.00 A.
Citation: ASVAB content domain — Electronics Information; underlying principle: ideal transformer current ratio (inverse turns).
Explanation: The capacitor charges near waveform peaks and then supplies current between peaks, reducing ripple.
Citation: ASVAB content domain — Electronics Information; underlying principle: filter capacitor smoothing (reducing ripple).
Explanation: A Zener holds near-constant voltage in reverse breakdown, making it useful as a reference/regulator.
Citation: ASVAB content domain — Electronics Information; underlying principle: Zener breakdown for voltage reference.
Explanation: In a low-side NPN switch, the collector connects to the load and the emitter connects to ground.
Citation: ASVAB content domain — Electronics Information; underlying principle: BJT switch wiring (load at collector).
Explanation: MOSFETs are voltage-controlled; gate-to-source voltage sets conduction with minimal steady gate current.
Citation: ASVAB content domain — Electronics Information; underlying principle: MOSFET gate-to-source voltage control.
Explanation: Period T = 1/f. For f = 6005 Hz, T = 1/6005 s = 0.0002 s = 0.17 ms.
Citation: ASVAB content domain — Electronics Information; underlying principle: frequency–period relationship (T = 1/f).
Explanation: Power is P = I²R = (2.90)²×8 ≈ 67.28 W.
Citation: ASVAB content domain — Electronics Information; underlying principle: power in resistors (P = I²R).
Explanation: Series current I = V/(R1+R2) = 24/(4+12) ≈ 1.50 A. Then V_R1 = IR1 ≈ 6.00 V.
Citation: ASVAB content domain — Electronics Information; underlying principle: series circuits (voltage division via IR drops).
Explanation: Each branch has 15 V. I1 = 15/9 ≈ 1.67 A and I2 = 15/13 ≈ 1.15 A. Total is 2.82 A.
Citation: ASVAB content domain — Electronics Information; underlying principle: parallel circuits (branch currents add).
Explanation: C_eq = (C1·C2)/(C1+C2) = (24·30)/(54) ≈ 13.33 µF.
Citation: ASVAB content domain — Electronics Information; underlying principle: series capacitance (reciprocal sum).
Explanation: X_L = 2πfL. L = 86 mH = 0.086 H, so X_L ≈ 983.44 Ω.
Citation: ASVAB content domain — Electronics Information; underlying principle: inductive reactance (X_L = 2πfL).
Explanation: X_C = 1/(2πfC). With C = 2.68 µF, X_C ≈ 37 Ω.
Citation: ASVAB content domain — Electronics Information; underlying principle: capacitive reactance (X_C = 1/(2πfC)).
Explanation: I_s/I_p = N_p/N_s, so I_s = 2.06×(1300/50) ≈ 53.56 A.
Citation: ASVAB content domain — Electronics Information; underlying principle: ideal transformer current ratio (inverse turns).
Explanation: The capacitor charges near waveform peaks and then supplies current between peaks, reducing ripple.
Citation: ASVAB content domain — Electronics Information; underlying principle: filter capacitor smoothing (reducing ripple).
Explanation: A Zener holds near-constant voltage in reverse breakdown, making it useful as a reference/regulator.
Citation: ASVAB content domain — Electronics Information; underlying principle: Zener breakdown for voltage reference.
Explanation: In a low-side NPN switch, the collector connects to the load and the emitter connects to ground.
Citation: ASVAB content domain — Electronics Information; underlying principle: BJT switch wiring (load at collector).
Explanation: A MOSFET turns on when V_GS exceeds threshold enough to form a conducting channel.
Citation: ASVAB content domain — Electronics Information; underlying principle: MOSFET threshold and V_GS control.
Explanation: Period T = 1/f. For f = 7481 Hz, T = 1/7481 s = 0.0001 s = 0.13 ms.
Citation: ASVAB content domain — Electronics Information; underlying principle: frequency–period relationship (T = 1/f).
Explanation: Power is P = I²R = (3.50)²×9 ≈ 110.25 W.
Citation: ASVAB content domain — Electronics Information; underlying principle: power in resistors (P = I²R).
Explanation: Series current I = V/(R1+R2) = 24/(2+15) ≈ 1.41 A. Then V_R1 = IR1 ≈ 2.82 V.
Citation: ASVAB content domain — Electronics Information; underlying principle: series circuits (voltage division via IR drops).
Explanation: Use Ohm’s law: I = V/R = 30/12 = 2.50 A. Power is P = VI = 30×2.50 ≈ 75 W (also V²/R).
Citation: ASVAB content domain — Electronics Information; underlying principle: Ohm’s law and power (I = V/R, P = VI).
Explanation: First combine the parallel pair: R_parallel = (20||20) = 10 Ω. Then add series: R_total = 10 + 10 = 20 Ω (≈ 20 Ω).
Citation: ASVAB content domain — Electronics Information; underlying principle: series/parallel resistance reduction.
Explanation: V_out = V_in × R_bottom/(R_top+R_bottom) = 15×3000/(2000+3000) = 15×0.6 = 9.0 V.
Citation: ASVAB content domain — Electronics Information; underlying principle: voltage divider (series resistors).
Explanation: For a sine wave, V_pk = V_rms·√2 = 120×1.414 ≈ 170 V.
Citation: ASVAB content domain — Electronics Information; underlying principle: RMS-to-peak conversion (sine wave).
Explanation: Cutoff f_c = 1/(2πRC). Here RC = 10,000×0.01×10⁻⁶ = 1.0×10⁻⁴ s, so f_c ≈ 1/(2π×1e-4) ≈ 1592 Hz.
Citation: ASVAB content domain — Electronics Information; underlying principle: RC filter cutoff (f_c = 1/(2πRC)).
Explanation: At DC (0 Hz), a capacitor’s reactance is extremely high, so it blocks DC. For changing signals, it can pass current depending on frequency.
Citation: ASVAB content domain — Electronics Information; underlying principle: capacitive coupling (blocking DC).
Explanation: Inductor energy U = ½LI² = 0.5×0.050×(2.0)² = 0.10 J.
Citation: ASVAB content domain — Electronics Information; underlying principle: inductor energy (½LI²).
Explanation: X_C = 1/(2πfC) = 1/(2π×500×2.2×10⁻⁶) ≈ 145 Ω.
Citation: ASVAB content domain — Electronics Information; underlying principle: capacitive reactance (X_C = 1/(2πfC)).
Explanation: X_L = 2πfL = 2π×1000×0.010 ≈ 62.8 Ω.
Citation: ASVAB content domain — Electronics Information; underlying principle: inductive reactance (X_L = 2πfL).
Explanation: Resistor must drop 12−2 = 10 V at 0.020 A, so R = V/I = 10/0.020 = 500 Ω.
Citation: ASVAB content domain — Electronics Information; underlying principle: current limiting with series resistor.
Explanation: A full-wave bridge rectifier uses four diodes so both half-cycles produce the same output polarity.
Citation: ASVAB content domain — Electronics Information; underlying principle: full-wave bridge rectification.
Explanation: For an ideal capacitor, current leads voltage by 90° because the current is proportional to the rate of change of voltage.
Citation: ASVAB content domain — Electronics Information; underlying principle: phase relationship in capacitors (I leads V).
Explanation: For an ideal inductor, voltage leads current by 90°, so current lags voltage by 90°.
Citation: ASVAB content domain — Electronics Information; underlying principle: phase relationship in inductors (I lags V).
Explanation: In a BJT, a small base current allows a much larger collector current, providing current amplification or switching control.
Citation: ASVAB content domain — Electronics Information; underlying principle: transistor current gain (base controls collector).
Explanation: An AND gate requires both inputs to be HIGH for the output to be HIGH.
Citation: ASVAB content domain — Electronics Information; underlying principle: basic logic gates (AND).
Explanation: XOR is HIGH only when exactly one input is HIGH (inputs differ).
Citation: ASVAB content domain — Electronics Information; underlying principle: basic logic gates (XOR).
Explanation: Regulators control output voltage to stay near a set value even as input voltage or load current varies.
Citation: ASVAB content domain — Electronics Information; underlying principle: voltage regulation concept.
Explanation: Branch currents: I1 = 12/6 = 2.0 A and I2 = 12/3 = 4.0 A. Total is I_total = I1+I2 = 6.0 A.
Citation: ASVAB content domain — Electronics Information; underlying principle: parallel circuits (currents add).
Explanation: KVL expresses conservation of energy: the algebraic sum of voltages around a closed loop is zero.
Citation: ASVAB content domain — Electronics Information; underlying principle: Kirchhoff’s Voltage Law (loop rule).
Explanation: KCL expresses conservation of charge: currents into a node equal currents out of the node.
Citation: ASVAB content domain — Electronics Information; underlying principle: Kirchhoff’s Current Law (node rule).
Explanation: Voltage drop inside the battery is I·r = 30×0.2 = 6.0 V. Terminal voltage ≈ 12.0 − 6.0 = 6.0 V.
Citation: ASVAB content domain — Electronics Information; underlying principle: internal resistance and voltage sag (V = E − Ir).
Explanation: A fuse should be rated just above normal operating current; 3 A provides margin over 2.5 A while still offering protection.
Citation: ASVAB content domain — Electronics Information; underlying principle: overcurrent protection (selecting fuse rating).
Explanation: For capacitors in series: 1/C_eq = 1/C1 + 1/C2, so C_eq = (C1·C2)/(C1+C2) = (10·20)/(30) ≈ 6.7 µF.
Citation: ASVAB content domain — Electronics Information; underlying principle: series capacitance (reciprocal sum).
Explanation: Capacitances in parallel add directly: C_eq = 4.7+2.2+1.0 = 7.9 µF.
Citation: ASVAB content domain — Electronics Information; underlying principle: parallel capacitance (direct sum).
Explanation: Wavelength λ = c/f. Using c ≈ 3×10⁸ m/s and f = 1×10⁸ Hz gives λ ≈ 3 m.
Citation: ASVAB content domain — Electronics Information; underlying principle: wave relationship (λ = c/f).
Explanation: Tolerance is ±5%: ±0.05×2.6 kΩ = ±0.128 kΩ, giving 2.423 to 2.678 kΩ.
Citation: ASVAB content domain — Electronics Information; underlying principle: resistor tolerance (% of nominal).
Explanation: The load is in parallel with the bottom resistor, reducing the effective bottom resistance. Use R_bottom_eff = R_bottom||R_load, then V_out = V_in×R_bottom_eff/(R_top+R_bottom_eff).
Citation: ASVAB content domain — Electronics Information; underlying principle: loaded voltage divider (parallel loading effect).
Explanation: A voltmeter is placed in parallel; high input resistance draws negligible current and avoids loading the circuit.
Citation: ASVAB content domain — Electronics Information; underlying principle: instrument loading (high voltmeter input resistance).
Explanation: The time constant is τ = RC. After one τ, a charging capacitor reaches about 63% of its final value.
Citation: ASVAB content domain — Electronics Information; underlying principle: RC time constant (τ = RC).
Explanation: Power gain in dB is 10·log10(Pout/Pin).
Citation: ASVAB content domain — Electronics Information; underlying principle: decibel power ratio (10·log10(P2/P1)).
Explanation: Real power is P = VI·pf; apparent power is S = VI.
Citation: ASVAB content domain — Electronics Information; underlying principle: real vs apparent power (P = VI·pf).
Explanation: Use f0 = 1/(2π√(LC)).
Citation: ASVAB content domain — Electronics Information; underlying principle: LC resonance (f0 = 1/(2π√(LC))).
Explanation: In reverse bias (below breakdown), a diode blocks current except for very small leakage.
Citation: ASVAB content domain — Electronics Information; underlying principle: diode reverse bias behavior (blocking current).
Explanation: Common convention: shorter lead is the cathode (negative), longer lead is the anode (positive).
Citation: ASVAB content domain — Electronics Information; underlying principle: component identification (LED polarity convention).
Explanation: Without negative feedback, small input differences drive the output to a rail, acting like a comparator.
Citation: ASVAB content domain — Electronics Information; underlying principle: op-amp open-loop gain and saturation.
Explanation: Ideal step size is approximately Vref/2^N.
Citation: ASVAB content domain — Electronics Information; underlying principle: ADC resolution (LSB ≈ Vref/2^N).
Explanation: A pull-up provides a defined HIGH state when undriven, preventing floating/noise-triggered states.
Citation: ASVAB content domain — Electronics Information; underlying principle: digital inputs (pull-up to prevent floating).
Explanation: For a load that averages pulses, Vavg ≈ V_high×duty (assuming 0 V low).
Citation: ASVAB content domain — Electronics Information; underlying principle: PWM averaging (Vavg = V·duty).
Explanation: At resonance, X_L and X_C cancel, leaving only resistance as the net impedance.
Citation: ASVAB content domain — Electronics Information; underlying principle: series resonance (X_L cancels X_C).
Explanation: Multiple ground return paths allow small AC currents to circulate and inject hum into signal references.
Citation: ASVAB content domain — Electronics Information; underlying principle: ground loops and common-mode noise.
Explanation: Tolerance is ±10%: ±0.10×7.8 kΩ = ±0.780 kΩ, giving 7.020 to 8.580 kΩ.
Citation: ASVAB content domain — Electronics Information; underlying principle: resistor tolerance (% of nominal).
Explanation: The load is in parallel with the bottom resistor, reducing the effective bottom resistance. Use R_bottom_eff = R_bottom||R_load, then V_out = V_in×R_bottom_eff/(R_top+R_bottom_eff).
Citation: ASVAB content domain — Electronics Information; underlying principle: loaded voltage divider (parallel loading effect).
Explanation: A voltmeter is placed in parallel; high input resistance draws negligible current and avoids loading the circuit.
Citation: ASVAB content domain — Electronics Information; underlying principle: instrument loading (high voltmeter input resistance).
Explanation: The time constant is τ = RC. After one τ, a charging capacitor reaches about 63% of its final value.
Citation: ASVAB content domain — Electronics Information; underlying principle: RC time constant (τ = RC).
Explanation: Power gain in dB is 10·log10(Pout/Pin).
Citation: ASVAB content domain — Electronics Information; underlying principle: decibel power ratio (10·log10(P2/P1)).
Explanation: Real power is P = VI·pf; apparent power is S = VI.
Citation: ASVAB content domain — Electronics Information; underlying principle: real vs apparent power (P = VI·pf).
Explanation: Use f0 = 1/(2π√(LC)).
Citation: ASVAB content domain — Electronics Information; underlying principle: LC resonance (f0 = 1/(2π√(LC))).
Explanation: In reverse bias (below breakdown), a diode blocks current except for very small leakage.
Citation: ASVAB content domain — Electronics Information; underlying principle: diode reverse bias behavior (blocking current).
Explanation: Common convention: shorter lead is the cathode (negative), longer lead is the anode (positive).
Citation: ASVAB content domain — Electronics Information; underlying principle: component identification (LED polarity convention).
Explanation: Without negative feedback, small input differences drive the output to a rail, acting like a comparator.
Citation: ASVAB content domain — Electronics Information; underlying principle: op-amp open-loop gain and saturation.
Explanation: Ideal step size is approximately Vref/2^N.
Citation: ASVAB content domain — Electronics Information; underlying principle: ADC resolution (LSB ≈ Vref/2^N).
Explanation: A pull-up provides a defined HIGH state when undriven, preventing floating/noise-triggered states.
Citation: ASVAB content domain — Electronics Information; underlying principle: digital inputs (pull-up to prevent floating).
Explanation: For a load that averages pulses, Vavg ≈ V_high×duty (assuming 0 V low).
Citation: ASVAB content domain — Electronics Information; underlying principle: PWM averaging (Vavg = V·duty).
Explanation: At resonance, X_L and X_C cancel, leaving only resistance as the net impedance.
Citation: ASVAB content domain — Electronics Information; underlying principle: series resonance (X_L cancels X_C).
Explanation: Multiple ground return paths allow small AC currents to circulate and inject hum into signal references.
Citation: ASVAB content domain — Electronics Information; underlying principle: ground loops and common-mode noise.
Explanation: Tolerance is ±5%: ±0.05×13.1 kΩ = ±0.653 kΩ, giving 12.398 to 13.703 kΩ.
Citation: ASVAB content domain — Electronics Information; underlying principle: resistor tolerance (% of nominal).
Explanation: The load is in parallel with the bottom resistor, reducing the effective bottom resistance. Use R_bottom_eff = R_bottom||R_load, then V_out = V_in×R_bottom_eff/(R_top+R_bottom_eff).
Citation: ASVAB content domain — Electronics Information; underlying principle: loaded voltage divider (parallel loading effect).
Explanation: A voltmeter is placed in parallel; high input resistance draws negligible current and avoids loading the circuit.
Citation: ASVAB content domain — Electronics Information; underlying principle: instrument loading (high voltmeter input resistance).
Explanation: The time constant is τ = RC. After one τ, a charging capacitor reaches about 63% of its final value.
Citation: ASVAB content domain — Electronics Information; underlying principle: RC time constant (τ = RC).
Explanation: Power gain in dB is 10·log10(Pout/Pin).
Citation: ASVAB content domain — Electronics Information; underlying principle: decibel power ratio (10·log10(P2/P1)).
Explanation: Real power is P = VI·pf; apparent power is S = VI.
Citation: ASVAB content domain — Electronics Information; underlying principle: real vs apparent power (P = VI·pf).
Explanation: Use f0 = 1/(2π√(LC)).
Citation: ASVAB content domain — Electronics Information; underlying principle: LC resonance (f0 = 1/(2π√(LC))).
Explanation: In reverse bias (below breakdown), a diode blocks current except for very small leakage.
Citation: ASVAB content domain — Electronics Information; underlying principle: diode reverse bias behavior (blocking current).
Explanation: Common convention: shorter lead is the cathode (negative), longer lead is the anode (positive).
Citation: ASVAB content domain — Electronics Information; underlying principle: component identification (LED polarity convention).
Explanation: Without negative feedback, small input differences drive the output to a rail, acting like a comparator.
Citation: ASVAB content domain — Electronics Information; underlying principle: op-amp open-loop gain and saturation.
Explanation: Ideal step size is approximately Vref/2^N.
Citation: ASVAB content domain — Electronics Information; underlying principle: ADC resolution (LSB ≈ Vref/2^N).
Explanation: A pull-up provides a defined HIGH state when undriven, preventing floating/noise-triggered states.
Citation: ASVAB content domain — Electronics Information; underlying principle: digital inputs (pull-up to prevent floating).
Explanation: For a load that averages pulses, Vavg ≈ V_high×duty (assuming 0 V low).
Citation: ASVAB content domain — Electronics Information; underlying principle: PWM averaging (Vavg = V·duty).
Explanation: At resonance, X_L and X_C cancel, leaving only resistance as the net impedance.
Citation: ASVAB content domain — Electronics Information; underlying principle: series resonance (X_L cancels X_C).
Explanation: Multiple ground return paths allow small AC currents to circulate and inject hum into signal references.
Citation: ASVAB content domain — Electronics Information; underlying principle: ground loops and common-mode noise.
Explanation: Tolerance is ±10%: ±0.10×18.3 kΩ = ±1.830 kΩ, giving 16.470 to 20.130 kΩ.
Citation: ASVAB content domain — Electronics Information; underlying principle: resistor tolerance (% of nominal).
Explanation: The load is in parallel with the bottom resistor, reducing the effective bottom resistance. Use R_bottom_eff = R_bottom||R_load, then V_out = V_in×R_bottom_eff/(R_top+R_bottom_eff).
Citation: ASVAB content domain — Electronics Information; underlying principle: loaded voltage divider (parallel loading effect).
Explanation: A voltmeter is placed in parallel; high input resistance draws negligible current and avoids loading the circuit.
Citation: ASVAB content domain — Electronics Information; underlying principle: instrument loading (high voltmeter input resistance).
Explanation: The time constant is τ = RC. After one τ, a charging capacitor reaches about 63% of its final value.
Citation: ASVAB content domain — Electronics Information; underlying principle: RC time constant (τ = RC).
Explanation: Power gain in dB is 10·log10(Pout/Pin).
Citation: ASVAB content domain — Electronics Information; underlying principle: decibel power ratio (10·log10(P2/P1)).
Explanation: Real power is P = VI·pf; apparent power is S = VI.
Citation: ASVAB content domain — Electronics Information; underlying principle: real vs apparent power (P = VI·pf).
Explanation: Use f0 = 1/(2π√(LC)).
Citation: ASVAB content domain — Electronics Information; underlying principle: LC resonance (f0 = 1/(2π√(LC))).
Explanation: In reverse bias (below breakdown), a diode blocks current except for very small leakage.
Citation: ASVAB content domain — Electronics Information; underlying principle: diode reverse bias behavior (blocking current).
Explanation: Common convention: shorter lead is the cathode (negative), longer lead is the anode (positive).
Citation: ASVAB content domain — Electronics Information; underlying principle: component identification (LED polarity convention).
Explanation: Without negative feedback, small input differences drive the output to a rail, acting like a comparator.
Citation: ASVAB content domain — Electronics Information; underlying principle: op-amp open-loop gain and saturation.
Explanation: Ideal step size is approximately Vref/2^N.
Citation: ASVAB content domain — Electronics Information; underlying principle: ADC resolution (LSB ≈ Vref/2^N).
Explanation: A pull-up provides a defined HIGH state when undriven, preventing floating/noise-triggered states.
Citation: ASVAB content domain — Electronics Information; underlying principle: digital inputs (pull-up to prevent floating).
Explanation: For a load that averages pulses, Vavg ≈ V_high×duty (assuming 0 V low).
Citation: ASVAB content domain — Electronics Information; underlying principle: PWM averaging (Vavg = V·duty).
Explanation: At resonance, X_L and X_C cancel, leaving only resistance as the net impedance.
Citation: ASVAB content domain — Electronics Information; underlying principle: series resonance (X_L cancels X_C).
Explanation: Multiple ground return paths allow small AC currents to circulate and inject hum into signal references.
Citation: ASVAB content domain — Electronics Information; underlying principle: ground loops and common-mode noise.
Explanation: Tolerance is ±5%: ±0.05×23.5 kΩ = ±1.177 kΩ, giving 22.372 to 24.727 kΩ.
Citation: ASVAB content domain — Electronics Information; underlying principle: resistor tolerance (% of nominal).
Explanation: The load is in parallel with the bottom resistor, reducing the effective bottom resistance. Use R_bottom_eff = R_bottom||R_load, then V_out = V_in×R_bottom_eff/(R_top+R_bottom_eff).
Citation: ASVAB content domain — Electronics Information; underlying principle: loaded voltage divider (parallel loading effect).
Explanation: A voltmeter is placed in parallel; high input resistance draws negligible current and avoids loading the circuit.
Citation: ASVAB content domain — Electronics Information; underlying principle: instrument loading (high voltmeter input resistance).
Explanation: The time constant is τ = RC. After one τ, a charging capacitor reaches about 63% of its final value.
Citation: ASVAB content domain — Electronics Information; underlying principle: RC time constant (τ = RC).
Explanation: Power gain in dB is 10·log10(Pout/Pin).
Citation: ASVAB content domain — Electronics Information; underlying principle: decibel power ratio (10·log10(P2/P1)).
Explanation: Real power is P = VI·pf; apparent power is S = VI.
Citation: ASVAB content domain — Electronics Information; underlying principle: real vs apparent power (P = VI·pf).
Explanation: Use f0 = 1/(2π√(LC)).
Citation: ASVAB content domain — Electronics Information; underlying principle: LC resonance (f0 = 1/(2π√(LC))).
Explanation: In reverse bias (below breakdown), a diode blocks current except for very small leakage.
Citation: ASVAB content domain — Electronics Information; underlying principle: diode reverse bias behavior (blocking current).
Explanation: Common convention: shorter lead is the cathode (negative), longer lead is the anode (positive).
Citation: ASVAB content domain — Electronics Information; underlying principle: component identification (LED polarity convention).
Explanation: Without negative feedback, small input differences drive the output to a rail, acting like a comparator.
Citation: ASVAB content domain — Electronics Information; underlying principle: op-amp open-loop gain and saturation.
Explanation: Ideal step size is approximately Vref/2^N.
Citation: ASVAB content domain — Electronics Information; underlying principle: ADC resolution (LSB ≈ Vref/2^N).
Explanation: A pull-up provides a defined HIGH state when undriven, preventing floating/noise-triggered states.
Citation: ASVAB content domain — Electronics Information; underlying principle: digital inputs (pull-up to prevent floating).
Explanation: For a load that averages pulses, Vavg ≈ V_high×duty (assuming 0 V low).
Citation: ASVAB content domain — Electronics Information; underlying principle: PWM averaging (Vavg = V·duty).
Explanation: At resonance, X_L and X_C cancel, leaving only resistance as the net impedance.
Citation: ASVAB content domain — Electronics Information; underlying principle: series resonance (X_L cancels X_C).
Explanation: Multiple ground return paths allow small AC currents to circulate and inject hum into signal references.
Citation: ASVAB content domain — Electronics Information; underlying principle: ground loops and common-mode noise.
Explanation: Use Ohm’s law: R = V/I. With V=12 V and I=1.8 A, R ≈ 6.67 Ω.
Citation: ASVAB content domain — Electronics Information; underlying principle: Ohm’s law (R = V/I).
Explanation: With voltage across a resistor, power is P = V²/R = 15.0²/10.0 ≈ 22.50 W.
Citation: ASVAB content domain — Electronics Information; underlying principle: power in resistors (P = V²/R).
Explanation: For two resistors in parallel: 1/Req = 1/R1 + 1/R2. Here Req ≈ 7.20 Ω.
Citation: ASVAB content domain — Electronics Information; underlying principle: parallel resistance (reciprocal sum).
Explanation: Combine the parallel pair first: R|| = (R1·R2)/(R1+R2) ≈ 4.00 Ω, then add the series resistor: R_total ≈ 14.00 Ω.
Citation: ASVAB content domain — Electronics Information; underlying principle: series-parallel reduction (parallel then series).
Explanation: Cutoff frequency is f_c = 1/(2πRC). Substituting values gives f_c ≈ 1026.1 Hz.
Citation: ASVAB content domain — Electronics Information; underlying principle: RC cutoff frequency (f_c = 1/(2πRC)).
Explanation: A conducting silicon diode is commonly approximated as about 0.7 V for quick estimates (actual drop varies with conditions).
Citation: ASVAB content domain — Electronics Information; underlying principle: silicon diode forward drop (≈0.7 V).
Explanation: Full-wave rectification flips the negative half-cycle, doubling the pulse rate. Ripple frequency ≈ 2×input frequency.
Citation: ASVAB content domain — Electronics Information; underlying principle: full-wave rectification (ripple frequency doubles).
Explanation: For an ideal transformer, V_s/V_p = N_s/N_p, so V_s = 120×(50/500) ≈ 12.00 V.
Citation: ASVAB content domain — Electronics Information; underlying principle: ideal transformer voltage ratio (V ∝ turns).
Explanation: E = ½LI². With L=0.020 H and I=0.50 A, E ≈ 0.002500 J = 2.50 mJ.
Citation: ASVAB content domain — Electronics Information; underlying principle: inductor energy (E = ½LI²).
Explanation: X_C = 1/(2πfC). Doubling C doubles the denominator, so X_C halves.
Citation: ASVAB content domain — Electronics Information; underlying principle: capacitive reactance dependence (X_C ∝ 1/C).
Explanation: For 3-band resistors, the first two bands are digits and the third is the multiplier (10^n). Decode digits, then apply the multiplier.
Citation: ASVAB content domain — Electronics Information; underlying principle: resistor color code (digits + multiplier).
Explanation: AND outputs HIGH only when all inputs are HIGH.
Citation: ASVAB content domain — Electronics Information; underlying principle: logic gate truth tables (AND).
Explanation: Sum powers of 2 where bits are 1. 10110₂ equals 22₁₀.
Citation: ASVAB content domain — Electronics Information; underlying principle: binary place value conversion.
Explanation: In an ideal inverting op-amp, A_v = -R_f/R_in = -20/2 ≈ -10.00.
Citation: ASVAB content domain — Electronics Information; underlying principle: inverting op-amp gain (A_v = -R_f/R_in).
Explanation: Saturation means the transistor is driven hard on; V_CE is small and it behaves like a closed switch.
Citation: ASVAB content domain — Electronics Information; underlying principle: BJT switching regions (saturation).
Explanation: For equal impedances, voltage gain in dB is 20·log10(V2/V1). Apply the given voltage ratio.
Citation: ASVAB content domain — Electronics Information; underlying principle: decibel voltage ratio (20·log10(V2/V1)).
Explanation: T = 1/f. For 2.5 kHz, T = 0.0004 s = 400 µs.
Citation: ASVAB content domain — Electronics Information; underlying principle: frequency–period relationship (T = 1/f).
Explanation: E = ½CV². With C=0.000100 F and V=12.0 V, E ≈ 0.007200 J = 7.20 mJ.
Citation: ASVAB content domain — Electronics Information; underlying principle: capacitor energy (E = ½CV²).
Explanation: First find resistor voltage: V_R = V_s − n·V_f = 9.0 − 2×2.0 = 5.0 V. Then R = V_R/I ≈ 5.0/0.020 ≈ 250.0 Ω.
Citation: ASVAB content domain — Electronics Information; underlying principle: LED current limiting (R = (V_s − ΣV_f)/I).
Explanation: A low-pass passes frequencies below cutoff and attenuates higher frequencies.
Citation: ASVAB content domain — Electronics Information; underlying principle: filter types (low-pass behavior).
Explanation: Use Ohm’s law: R = V/I. With V=9 V and I=0.75 A, R ≈ 12.00 Ω.
Citation: ASVAB content domain — Electronics Information; underlying principle: Ohm’s law (R = V/I).
Explanation: With voltage across a resistor, power is P = V²/R = 12.0²/5.6 ≈ 25.71 W.
Citation: ASVAB content domain — Electronics Information; underlying principle: power in resistors (P = V²/R).
Explanation: For two resistors in parallel: 1/Req = 1/R1 + 1/R2. Here Req ≈ 7.50 Ω.
Citation: ASVAB content domain — Electronics Information; underlying principle: parallel resistance (reciprocal sum).
Explanation: Combine the parallel pair first: R|| = (R1·R2)/(R1+R2) ≈ 4.00 Ω, then add the series resistor: R_total ≈ 8.00 Ω.
Citation: ASVAB content domain — Electronics Information; underlying principle: series-parallel reduction (parallel then series).
Explanation: Cutoff frequency is f_c = 1/(2πRC). Substituting values gives f_c ≈ 1591.5 Hz.
Citation: ASVAB content domain — Electronics Information; underlying principle: RC cutoff frequency (f_c = 1/(2πRC)).
Explanation: A conducting silicon diode is commonly approximated as about 0.7 V for quick estimates (actual drop varies with conditions).
Citation: ASVAB content domain — Electronics Information; underlying principle: silicon diode forward drop (≈0.7 V).
Explanation: Full-wave rectification flips the negative half-cycle, doubling the pulse rate. Ripple frequency ≈ 2×input frequency.
Citation: ASVAB content domain — Electronics Information; underlying principle: full-wave rectification (ripple frequency doubles).
Explanation: For an ideal transformer, V_s/V_p = N_s/N_p, so V_s = 12×(800/200) ≈ 48.00 V.
Citation: ASVAB content domain — Electronics Information; underlying principle: ideal transformer voltage ratio (V ∝ turns).
Explanation: E = ½LI². With L=0.005 H and I=2.00 A, E ≈ 0.010000 J = 10.00 mJ.
Citation: ASVAB content domain — Electronics Information; underlying principle: inductor energy (E = ½LI²).
Explanation: X_L = 2πfL. Doubling L doubles X_L.
Citation: ASVAB content domain — Electronics Information; underlying principle: inductive reactance dependence (X_L ∝ L).
Explanation: For 3-band resistors, the first two bands are digits and the third is the multiplier (10^n). Decode digits, then apply the multiplier.
Citation: ASVAB content domain — Electronics Information; underlying principle: resistor color code (digits + multiplier).
Explanation: OR outputs LOW only when all inputs are LOW.
Citation: ASVAB content domain — Electronics Information; underlying principle: logic gate truth tables (OR).
Explanation: Sum powers of 2 where bits are 1. 11001₂ equals 25₁₀.
Citation: ASVAB content domain — Electronics Information; underlying principle: binary place value conversion.
Explanation: In an ideal inverting op-amp, A_v = -R_f/R_in = -15/5 ≈ -3.00.
Citation: ASVAB content domain — Electronics Information; underlying principle: inverting op-amp gain (A_v = -R_f/R_in).
Explanation: In saturation, extra base drive does not significantly increase collector current; the device is essentially ‘maxed out’ on.
Citation: ASVAB content domain — Electronics Information; underlying principle: BJT switching regions (saturation condition).
Explanation: For equal impedances, voltage gain in dB is 20·log10(V2/V1). Apply the given voltage ratio.
Citation: ASVAB content domain — Electronics Information; underlying principle: decibel voltage ratio (20·log10(V2/V1)).
Explanation: T = 1/f. At 8.0 MHz, T = 125 ns.
Citation: ASVAB content domain — Electronics Information; underlying principle: frequency–period relationship (T = 1/f).
Explanation: E = ½CV². With C=0.000010 F and V=50.0 V, E ≈ 0.012500 J = 12.50 mJ.
Citation: ASVAB content domain — Electronics Information; underlying principle: capacitor energy (E = ½CV²).
Explanation: First find resistor voltage: V_R = V_s − n·V_f = 12.0 − 3×2.1 = 5.7 V. Then R = V_R/I ≈ 5.7/0.015 ≈ 380.0 Ω.
Citation: ASVAB content domain — Electronics Information; underlying principle: LED current limiting (R = (V_s − ΣV_f)/I).
Explanation: A high-pass attenuates low frequencies and passes higher frequencies.
Citation: ASVAB content domain — Electronics Information; underlying principle: filter types (high-pass behavior).
Explanation: Use Ohm’s law: R = V/I. With V=24 V and I=3 A, R ≈ 8.00 Ω.
Citation: ASVAB content domain — Electronics Information; underlying principle: Ohm’s law (R = V/I).
Explanation: With voltage across a resistor, power is P = V²/R = 9.0²/33.0 ≈ 2.45 W.
Citation: ASVAB content domain — Electronics Information; underlying principle: power in resistors (P = V²/R).
Explanation: For two resistors in parallel: 1/Req = 1/R1 + 1/R2. Here Req ≈ 6.00 Ω.
Citation: ASVAB content domain — Electronics Information; underlying principle: parallel resistance (reciprocal sum).
Explanation: Combine the parallel pair first: R|| = (R1·R2)/(R1+R2) ≈ 2.00 Ω, then add the series resistor: R_total ≈ 4.00 Ω.
Citation: ASVAB content domain — Electronics Information; underlying principle: series-parallel reduction (parallel then series).
Explanation: Cutoff frequency is f_c = 1/(2πRC). Substituting values gives f_c ≈ 723.4 Hz.
Citation: ASVAB content domain — Electronics Information; underlying principle: RC cutoff frequency (f_c = 1/(2πRC)).
Explanation: A conducting silicon diode is commonly approximated as about 0.7 V for quick estimates (actual drop varies with conditions).
Citation: ASVAB content domain — Electronics Information; underlying principle: silicon diode forward drop (≈0.7 V).
Explanation: Full-wave rectification flips the negative half-cycle, doubling the pulse rate. Ripple frequency ≈ 2×input frequency.
Citation: ASVAB content domain — Electronics Information; underlying principle: full-wave rectification (ripple frequency doubles).
Explanation: For an ideal transformer, V_s/V_p = N_s/N_p, so V_s = 240×(1/10) ≈ 24.00 V.
Citation: ASVAB content domain — Electronics Information; underlying principle: ideal transformer voltage ratio (V ∝ turns).
Explanation: E = ½LI². With L=0.040 H and I=0.20 A, E ≈ 0.000800 J = 0.80 mJ.
Citation: ASVAB content domain — Electronics Information; underlying principle: inductor energy (E = ½LI²).
Explanation: X_C = 1/(2πfC). Doubling f halves X_C.
Citation: ASVAB content domain — Electronics Information; underlying principle: capacitive reactance dependence (X_C ∝ 1/f).
Explanation: For 3-band resistors, the first two bands are digits and the third is the multiplier (10^n). Decode digits, then apply the multiplier.
Citation: ASVAB content domain — Electronics Information; underlying principle: resistor color code (digits + multiplier).
Explanation: NOT inverts: input HIGH becomes LOW.
Citation: ASVAB content domain — Electronics Information; underlying principle: logic gate truth tables (NOT).
Explanation: Sum powers of 2 where bits are 1. 100111₂ equals 39₁₀.
Citation: ASVAB content domain — Electronics Information; underlying principle: binary place value conversion.
Explanation: In an ideal inverting op-amp, A_v = -R_f/R_in = -47/1 ≈ -47.00.
Citation: ASVAB content domain — Electronics Information; underlying principle: inverting op-amp gain (A_v = -R_f/R_in).
Explanation: Cutoff means base-emitter is not forward biased, so collector current is approximately zero.
Citation: ASVAB content domain — Electronics Information; underlying principle: BJT switching regions (cutoff).
Explanation: For equal impedances, voltage gain in dB is 20·log10(V2/V1). Apply the given voltage ratio.
Citation: ASVAB content domain — Electronics Information; underlying principle: decibel voltage ratio (20·log10(V2/V1)).
Explanation: T = 1/f. For 400 Hz, T = 0.0025 s = 2.50 ms.
Citation: ASVAB content domain — Electronics Information; underlying principle: frequency–period relationship (T = 1/f).
Explanation: E = ½CV². With C=0.000470 F and V=5.0 V, E ≈ 0.005875 J = 5.88 mJ.
Citation: ASVAB content domain — Electronics Information; underlying principle: capacitor energy (E = ½CV²).
Explanation: First find resistor voltage: V_R = V_s − n·V_f = 5.0 − 1×2.0 = 3.0 V. Then R = V_R/I ≈ 3.0/0.010 ≈ 300.0 Ω.
Citation: ASVAB content domain — Electronics Information; underlying principle: LED current limiting (R = (V_s − ΣV_f)/I).
Explanation: Band-pass filters pass a middle band and attenuate frequencies outside the band.
Citation: ASVAB content domain — Electronics Information; underlying principle: filter types (band-pass behavior).
Explanation: Use Ohm’s law: R = V/I. With V=6 V and I=0.2 A, R ≈ 30.00 Ω.
Citation: ASVAB content domain — Electronics Information; underlying principle: Ohm’s law (R = V/I).
Explanation: With voltage across a resistor, power is P = V²/R = 6.0²/4.7 ≈ 7.66 W.
Citation: ASVAB content domain — Electronics Information; underlying principle: power in resistors (P = V²/R).
Explanation: For two resistors in parallel: 1/Req = 1/R1 + 1/R2. Here Req ≈ 12.00 Ω.
Citation: ASVAB content domain — Electronics Information; underlying principle: parallel resistance (reciprocal sum).
Explanation: Combine the parallel pair first: R|| = (R1·R2)/(R1+R2) ≈ 9.33 Ω, then add the series resistor: R_total ≈ 16.33 Ω.
Citation: ASVAB content domain — Electronics Information; underlying principle: series-parallel reduction (parallel then series).
Explanation: Cutoff frequency is f_c = 1/(2πRC). Substituting values gives f_c ≈ 1539.2 Hz.
Citation: ASVAB content domain — Electronics Information; underlying principle: RC cutoff frequency (f_c = 1/(2πRC)).
Explanation: A conducting silicon diode is commonly approximated as about 0.7 V for quick estimates (actual drop varies with conditions).
Citation: ASVAB content domain — Electronics Information; underlying principle: silicon diode forward drop (≈0.7 V).
Explanation: Full-wave rectification flips the negative half-cycle, doubling the pulse rate. Ripple frequency ≈ 2×input frequency.
Citation: ASVAB content domain — Electronics Information; underlying principle: full-wave rectification (ripple frequency doubles).
Explanation: For an ideal transformer, V_s/V_p = N_s/N_p, so V_s = 18×(75/150) ≈ 9.00 V.
Citation: ASVAB content domain — Electronics Information; underlying principle: ideal transformer voltage ratio (V ∝ turns).
Explanation: E = ½LI². With L=0.012 H and I=1.50 A, E ≈ 0.013500 J = 13.50 mJ.
Citation: ASVAB content domain — Electronics Information; underlying principle: inductor energy (E = ½LI²).
Explanation: X_L = 2πfL. Doubling f doubles X_L.
Citation: ASVAB content domain — Electronics Information; underlying principle: inductive reactance dependence (X_L ∝ f).
Explanation: For 3-band resistors, the first two bands are digits and the third is the multiplier (10^n). Decode digits, then apply the multiplier.
Citation: ASVAB content domain — Electronics Information; underlying principle: resistor color code (digits + multiplier).
Explanation: NAND is the inverse of AND, so it is LOW only when both inputs are HIGH.
Citation: ASVAB content domain — Electronics Information; underlying principle: logic gate truth tables (NAND).
Explanation: Sum powers of 2 where bits are 1. 111000₂ equals 56₁₀.
Citation: ASVAB content domain — Electronics Information; underlying principle: binary place value conversion.
Explanation: In an ideal inverting op-amp, A_v = -R_f/R_in = -100/10 ≈ -10.00.
Citation: ASVAB content domain — Electronics Information; underlying principle: inverting op-amp gain (A_v = -R_f/R_in).
Explanation: Cutoff corresponds to the transistor being off due to insufficient base-emitter forward bias.
Citation: ASVAB content domain — Electronics Information; underlying principle: BJT switching regions (cutoff condition).
Explanation: For equal impedances, voltage gain in dB is 20·log10(V2/V1). Apply the given voltage ratio.
Citation: ASVAB content domain — Electronics Information; underlying principle: decibel voltage ratio (20·log10(V2/V1)).
Explanation: f = 1/T. If T = 0.002 s, f = 500 Hz.
Citation: ASVAB content domain — Electronics Information; underlying principle: frequency–period relationship (f = 1/T).
Explanation: E = ½CV². With C=0.000001 F and V=200.0 V, E ≈ 0.020000 J = 20.00 mJ.
Citation: ASVAB content domain — Electronics Information; underlying principle: capacitor energy (E = ½CV²).
Explanation: First find resistor voltage: V_R = V_s − n·V_f = 24.0 − 4×3.0 = 12.0 V. Then R = V_R/I ≈ 12.0/0.025 ≈ 480.0 Ω.
Citation: ASVAB content domain — Electronics Information; underlying principle: LED current limiting (R = (V_s − ΣV_f)/I).
Explanation: A notch filter attenuates a selected band while passing others.
Citation: ASVAB content domain — Electronics Information; underlying principle: filter types (band-stop/notch behavior).
Explanation: Use Ohm’s law: R = V/I. With V=36 V and I=2.4 A, R ≈ 15.00 Ω.
Citation: ASVAB content domain — Electronics Information; underlying principle: Ohm’s law (R = V/I).
Explanation: With voltage across a resistor, power is P = V²/R = 48.0²/22.0 ≈ 104.73 W.
Citation: ASVAB content domain — Electronics Information; underlying principle: power in resistors (P = V²/R).
Explanation: For two resistors in parallel: 1/Req = 1/R1 + 1/R2. Here Req ≈ 4.00 Ω.
Citation: ASVAB content domain — Electronics Information; underlying principle: parallel resistance (reciprocal sum).
Explanation: Combine the parallel pair first: R|| = (R1·R2)/(R1+R2) ≈ 6.67 Ω, then add the series resistor: R_total ≈ 11.67 Ω.
Citation: ASVAB content domain — Electronics Information; underlying principle: series-parallel reduction (parallel then series).
Explanation: Cutoff frequency is f_c = 1/(2πRC). Substituting values gives f_c ≈ 723.4 Hz.
Citation: ASVAB content domain — Electronics Information; underlying principle: RC cutoff frequency (f_c = 1/(2πRC)).
Explanation: A conducting silicon diode is commonly approximated as about 0.7 V for quick estimates (actual drop varies with conditions).
Citation: ASVAB content domain — Electronics Information; underlying principle: silicon diode forward drop (≈0.7 V).
Explanation: Full-wave rectification flips the negative half-cycle, doubling the pulse rate. Ripple frequency ≈ 2×input frequency.
Citation: ASVAB content domain — Electronics Information; underlying principle: full-wave rectification (ripple frequency doubles).
Explanation: For an ideal transformer, V_s/V_p = N_s/N_p, so V_s = 6×(4/1) ≈ 24.00 V.
Citation: ASVAB content domain — Electronics Information; underlying principle: ideal transformer voltage ratio (V ∝ turns).
Explanation: E = ½LI². With L=0.002 H and I=3.00 A, E ≈ 0.009000 J = 9.00 mJ.
Citation: ASVAB content domain — Electronics Information; underlying principle: inductor energy (E = ½LI²).
Explanation: X_C = 1/(2πfC). Halving C halves the denominator, so X_C doubles.
Citation: ASVAB content domain — Electronics Information; underlying principle: capacitive reactance dependence (X_C ∝ 1/C).
Explanation: For 3-band resistors, the first two bands are digits and the third is the multiplier (10^n). Decode digits, then apply the multiplier.
Citation: ASVAB content domain — Electronics Information; underlying principle: resistor color code (digits + multiplier).
Explanation: XOR outputs HIGH when the inputs are different.
Citation: ASVAB content domain — Electronics Information; underlying principle: logic gate truth tables (XOR).
Explanation: Sum powers of 2 where bits are 1. 010101₂ equals 21₁₀.
Citation: ASVAB content domain — Electronics Information; underlying principle: binary place value conversion.
Explanation: In an ideal inverting op-amp, A_v = -R_f/R_in = -33/3.3 ≈ -10.00.
Citation: ASVAB content domain — Electronics Information; underlying principle: inverting op-amp gain (A_v = -R_f/R_in).
Explanation: A saturated BJT behaves like a closed switch with a small collector-emitter voltage.
Citation: ASVAB content domain — Electronics Information; underlying principle: BJT as a switch (saturation ≈ closed switch).
Explanation: For equal impedances, voltage gain in dB is 20·log10(V2/V1). Apply the given voltage ratio.
Citation: ASVAB content domain — Electronics Information; underlying principle: decibel voltage ratio (20·log10(V2/V1)).
Explanation: f = 1/T. With T = 20 µs, f = 50,000 Hz = 50.0 kHz.
Citation: ASVAB content domain — Electronics Information; underlying principle: frequency–period relationship (f = 1/T).
Explanation: E = ½CV². With C=0.000022 F and V=24.0 V, E ≈ 0.006336 J = 6.34 mJ.
Citation: ASVAB content domain — Electronics Information; underlying principle: capacitor energy (E = ½CV²).
Explanation: First find resistor voltage: V_R = V_s − n·V_f = 6.0 − 2×1.8 = 2.4 V. Then R = V_R/I ≈ 2.4/0.030 ≈ 80.0 Ω.
Citation: ASVAB content domain — Electronics Information; underlying principle: LED current limiting (R = (V_s − ΣV_f)/I).
Explanation: A high-pass is defined by attenuating low frequencies more than high frequencies.
Citation: ASVAB content domain — Electronics Information; underlying principle: filter types (high-pass vs low-pass).
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ASVAB Auto & Shop Information (AS) Practice Test (2026)
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